unisonic technologies co., ltd 2sb562 pnp epitaxial silicon tran sistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r211-004.b low frequency power amplifier ? features * low frequency power amplifier * complement to 2sd468 to-92 1 to-92nl 1 ? ordering information order number pin assignment lead free halogen free package 1 2 3 packing 2sb562l-x-t92-b 2SB562G-X-T92-B to-92 e c b tape box 2sb562l-x-t92-k 2sb562g-x-t92-k to-92 e c b bulk 2sb562l-x-t9n-b 2sb562g-x-t9n-b to-92nl e c b tape box 2sb562l-x-t9n-k 2sb562g-x-t9n-k to-92nl e c b bulk
2sb562 pnp epitaxial silicon tran sistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r211-004.b ? absolute maximum rating (t a =25c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current ic -1 a collector peak current ic(peak) -1.5 a collector power dissipation p c 0.9 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector to base breakdown voltage v (br)cbo ic=-10 a, i e =0 -25 v collector to emitter breakdown voltage v (br)ceo ic=-1ma, r be = -20 v emitter to base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-20v, i e =0 -1 a dc current transfer ratio h fe v ce =-2v, ic=-0.5a (note) 85 240 collector to emitter saturation voltage v ce(sat) ic=-0.8a, i b =-0.08a (note) -0.2 -0.5 v base to emitter voltage v be v ce =-2v, ic=-0.5a (note) -0.8 -1.0 v gain bandwidth product f t v ce =-2v, ic=-0.5a (note) 350 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 38 pf note 1: pulse test ? classification of hfe rank b c range 85 - 170 120 - 240
2sb562 pnp epitaxial silicon tran sistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r211-004.b ? typical characteristics
2sb562 pnp epitaxial silicon tran sistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r211-004.b ? typical characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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